Method for line density multiplication using block copolymers and sequential infiltration synthesis

ABSTRACT

Block copolymers (BCPs) and synthetic infiltration synthesis (SIS) are used to double the line density on a substrate. The BCP comprises first and second interconnected BCP components with a functional group at the junction or interface of the components. After deposition of the BCP on the substrate and annealing, a pattern of parallel stripes of first and second BCP components is formed with a pattern of functional group interfaces between the components. Each of the BCP components is non-reactive with atomic layer deposition (ALD) precursors, while the functional group is reactive with the ALD precursors. The ALD results in the infiltration of inorganic material into the interfaces where the reactive functional groups are located but without affecting the BCP components. After removal of the organic material, a pattern of parallel lines of inorganic material remains with a pitch half that of the stripes of BCP components.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to line density multiplication in the area ofnanotechnology, such as the fabrication of semiconductor devices andnanoimprint templates.

2. Description of the Related Art

Current photolithography has reached fundamental printing limits. As aresult, it is necessary to develop processes for line densitymultiplication. One process that is gaining recognition for use in DRAMand NAND flash manufacturing is sidewall spacer “line doubling”,sometimes also referred to as “line multiplication”, “frequencydoubling”, “self-aligned double patterning (SADP)”, “sidewall imagetransfer” or “pitch-halving”. The process also has application in makingimprint templates, which may be used for making bit-patterned-media(BPM) magnetic recording disks. For example, U.S. Pat. No. 7,758,981 B2,which is assigned to the same assignee as this application, describes amethod using sidewall spacer line doubling to make an imprint templatewith generally radial lines.

The process uses sidewall spacers to create patterned hardmasks as ameans of doubling the line density. The prior art process is illustratedin FIGS. 1A-1F. A layer of hardmask material is deposited on asubstrate, and a layer of mandrel material (which may be a photoresist)is patterned into lines on the hardmask layer (FIG. 1A). A conformallayer of spacer material is deposited on the tops and sides of themandrel lines and on the hardmask layer in the gaps between the mandrellines (FIG. 1B). The spacer material is typically an inorganic material,typically oxides like Al₂O₃, and is typically formed by atomic layerdeposition (ALD). ALD is a well-known thin film deposition process basedon the sequential use of a gas phase chemical process, in which byrepeatedly exposing gas phase chemicals known as the precursors to thegrowth surface and activating them at elevated temperature, a preciselycontrolled thin film is deposited in a conformal manner. The spacermaterial on the tops of the mandrel lines and in the gaps between themandrel lines is then removed by anisotropic etching, leaving themandrel lines with sidewalls of spacer material (FIG. 1C). The materialof the mandrel lines is then removed, leaving lines of sidewall spacermaterial on the hardmask layer (FIG. 1D). The number of spacer lines inFIG. 1D is double the number of mandrel lines in FIG. 1A, and thus thepitch of the spacer lines is half the pitch of the mandrel lines, hencethe terms “line doubling” and “pitch halving”. The spacer lines are thenused as an etch mask to transfer the pattern into the hardmask (FIG. 1E)and the spacer lines are then removed, leaving a pattern of hardmasklines on the substrate (FIG. 1E).

A problem with the prior art method of line density multiplication bythe use of sidewall spacers is that the sidewall spacers formed on themandrel stripes are used as the final etch mask to etch the substrate.However, the mandrel stripes are often not precisely perpendicular tothe substrate, resulting in tilted sidewall spacers and degraded etchedsubstrates.

What is needed is a line doubling process that does not require mandrelstripes and sidewall spacers.

SUMMARY OF THE INVENTION

In embodiments of this invention block copolymers (BCPs) and syntheticinfiltration synthesis (SIS) are used to halve the pitch and thus doublethe line density on a substrate. The BCP comprises first and secondinterconnected BCP components with a functional group at the junction orinterface of the components. After deposition of the BCP on thesubstrate and annealing, a pattern of parallel stripes of first andsecond BCP components is formed with a pattern of interfaces between thecomponents that contains the functional groups. The structure is thenplaced in an atomic layer deposition (ALD) chamber. Each of the BCPcomponents is non-reactive with the ALD precursors, while the functionalgroup is reactive with the ALD precursors. The ALD results in theinfiltration of inorganic material, e.g., alumina, into the interfaceswhere the reactive functional groups are located but without affectingthe BCP components. The organic material of the BCP components andfunctional groups is removed, leaving a pattern of parallel lines ofinorganic material with a pitch half that of the stripes of BCPcomponents. The inorganic lines can then be used as an etch mask to etchthe underlying substrate. The etched substrate can be used as ananoimprint template.

For a fuller understanding of the nature and advantages of the presentinvention, reference should be made to the following detaileddescription taken together with the accompanying figures.

BRIEF DESCRIPTION OF THE DRAWING

FIGS. 1A-1F are sectional views illustrating the general concept ofsidewall spacer line doubling according to the prior art.

FIGS. 2A-2F are side sectional views illustrating the prior art methodusing sequential infiltration synthesis (SIS) and a block copolymer(BCP) film for making an etched structure with a line density equal tothat of the density of the BCP periodic pattern.

FIGS. 3A-3F are side sectional views illustrating an embodiment of themethod of this invention using BCPs and SIS for making an etchedstructure with line density that is a multiple of the density of the BCPperiodic pattern.

DETAILED DESCRIPTION OF THE INVENTION

Self-assembling block copolymers (BCPs) have been proposed for creatingperiodic nanometer (nm) scale features. Self-assembling BCPs typicallycontain two or more different polymeric block components, for examplecomponents A and B, that are immiscible with one another. Under suitableconditions, the two or more immiscible polymeric block componentsseparate into two or more different phases or microdomains on ananometer scale and thereby form ordered patterns of isolated nano-sizedstructural units. There are many types of BCPs that can be used forforming the self-assembled periodic patterns. If one of the components Aor B is selectively removable without having to remove the other, thenan orderly arranged structural units of the un-removed component can beformed.

Specific examples of suitable BCPs that can be used for forming theself-assembled periodic patterns include, but are not limited to:poly(styrene-block-methyl methacrylate) (PS-b-PMMA), poly(ethyleneoxide-block-isoprene) (PEO-b-PI), poly(ethylene oxide-block-butadiene)(PEO-b-PBD), poly(ethylene oxide-block-styrene) (PEO-b-PS),poly(ethylene oxide-block-methylmethacrylate) (PEO-b-PMMA),poly(ethyleneoxide-block-ethylethylene) (PEO-b-PEE),poly(styrene-block-vinylpyridine) (PS-b-PVP),poly(styrene-block-isoprene) (PS-b-PI), poly(styrene-block-butadiene)(PS-b-PBD), poly(styrene-block-ferrocenyldimethylsilane) (PS-b-PFS),poly(butadiene-block-vinylpyridine) (PBD-b-PVP),poly(isoprene-block-methyl methacrylate) (PI-b-PMMA),poly(styrene-block-lactic acid) (PS-b-PLA) andpoly(styrene-block-dymethylsiloxane) (PS-b-PDMS).

The specific self-assembled periodic patterns formed by the BCP aredetermined by the molecular volume ratio between the first and secondpolymeric block components A and B. When the ratio of the molecularvolume of the second polymeric block component B over the molecularvolume of the first polymeric block component A is less than about 80:20but greater than about 60:40, the BCP will form an ordered array ofcylinders composed of the first polymeric block component A in a matrixcomposed of the second polymeric block component B. When the ratio ofthe molecular volume of the first polymeric block component A over themolecular volume of the second polymeric block component B is less thanabout 60:40 but is greater than about 40:60, the BCP will formalternating lamellae composed of the first and second polymeric blockcomponents A and B. The un-removed component is used as an etch mask toetch the underlying template substrate. When the ratio of B over A isgreater than about 80:20 the BCP will form an ordered array of spheresin a matrix of the second component. For lamellar or cylinder formingBCPs, the orientation of the lamellae or the cylinders with respect tothe substrate depends on the interfacial energies (wetting properties)of the block copolymer components at both the substrate interface and atthe top interface. When one of the block components preferentially wetsthe substrate (or the top free interface) the block copolymers formlayers parallel to the substrate. When the wetting properties at theinterface are neutral to either block, then both block components can bein contact with the interface, facilitating the formation of blockcopolymer domains with perpendicular orientation. In practice, thewetting properties of the substrate are engineered by coating thesubstrate with “surface modification layers” that tune the wettingproperties at the interface. Surface modification layers are usuallymade of polymer brushes or mats typically (but not necessarily) composedof a mixture of the constituent block materials of the BCP to be used.

The periodicity or natural pitch (L₀) of the repeating structural unitsin the periodic pattern is determined by intrinsic polymeric propertiessuch as the degree of polymerization N and the Flory-Huggins interactionparameter χ. L₀ scales with the degree of polymerization N, which inturn correlates with the molecular weight M. Therefore, by adjusting thetotal molecular weight of the BCP, the natural pitch (L₀) of therepeating structural units can be selected.

To form the self-assembled periodic patterns, the BCP is first dissolvedin a suitable solvent system to form a BCP solution, which is thenapplied onto a surface to form a thin BCP layer, followed by annealingof the thin BCP layer, which causes phase separation between thedifferent polymeric block components contained in the BCP. The solventsystem used for dissolving the BCP and forming the BCP solution maycomprise any suitable non-polar solvent, including, but not limited to:toluene, propylene glycol monomethyl ether acetate (PGMEA), propyleneglycol monomethyl ether (PGME), and acetone. The BCP solution can beapplied to the substrate surface by any suitable techniques, including,but not limited to: spin casting, coating, spraying, ink coating, dipcoating, etc. Preferably, the BCP solution is spin cast onto thesubstrate surface to form a thin BCP layer. After application of thethin BCP layer onto the substrate surface, the entire substrate isannealed to effectuate microphase segregation of the different blockcomponents contained by the BCP, thereby forming the periodic patternswith repeating structural units.

The BCP films in the above-described techniques self-assemble withoutany direction or guidance. This undirected self-assembly results inpatterns with defects so it is not practical for applications thatrequire long-range ordering, such as for making imprint templates.However, directed self-assembly (DSA) of block copolymers (BCPs) hasbeen proposed for making imprint templates. DSA of BCPs by use of apatterned sublayer for the BCP film is well-known, as described forexample in U.S. Pat. No. 7,976,715; U.S. Pat. No. 8,059,350; and U.S.Pat. No. 8,119,017. Pending application Ser. No. 13/627,492, filed Sep.26, 2012 and assigned to the same assignee as this application,describes the use DSA of BCPs to make two submaster imprint templates,one with a pattern of generally radial lines, and the other withgenerally concentric rings, to make a master imprint template, which isthen used to imprint patterned-media magnetic recording disks. Imprinttemplates made with DSA of BCPs have also been proposed for use insemiconductor manufacturing, for example, for patterning parallelgenerally straight lines in MPU, DRAM and NAND flash devices.

More recently a method termed “sequential infiltration synthesis” (SIS)uses BCP films and atomic layer deposition (ALD) to selectively grownanometer scale patterns of inorganic material inside BCP films. (SeePeng et al., “A Route to Nanoscopic Materials via SequentialInfiltration Synthesis on Block Copolymer Templates”, ACS Nano, VOL. 5,NO. 6, 4600-4606, 2011). The prior art method for making an imprinttemplate using DSA of BCPs and SIS will be described in general termswith FIGS. 2A-2F for an example where the substrate will become animprint template with protrusions in a pattern of parallel bars. FIG. 2Ais a side sectional view showing a patterned sublayer 55 on the surfaceof template 50. A BCP film is deposited on the patterned sublayer 55 andannealed to form the self-assembled pattern of alternating A component(polystyrene-PS) parallel stripes and B component (PMMA) parallelstripes. The sublayer 55 has been patterned to direct the self-assemblyof the stripes of A and B BCP components with a natural pitch of L₀.

The sample is then placed in an ALD chamber, such as those availablefrom Cambridge Nanotech Inc. of Cambridge, Mass. ALD is known as aprocess for forming very thin films on a substrate. ALD involvesdeposition of gas phase precursor molecules. Most ALD processes arebased on binary reaction sequences where two surface reactions occur anddeposit a binary compound film, such as the use of trimethylaluminum(TMA) and H₂O to form alumina (Al₂O₃). An overview of ALD is presentedby George, “Atomic Layer Deposition: An Overview”, Chemical Review,2010, Vol. 110, No. 1, 111-131. In SIS, the BCP has been chosen so thatone component, for example PS, is inert to the ALD precursors while theother component, PMMA, reacts with the precursor. A first precursor, forexample TMA, is introduced into the ALD chamber (FIG. 2B). PMMA containscarbonyl groups that react with the TMA, causing the TMA to infiltratethe PMMA. The controlled interaction of TMA with carbonyl groups in thePMMA generates Al—CH₃/Al—OH sites inside the PMMA. A second precursor,for example water vapor, is then introduced to finish the reaction,forming alumina in the locations in the PMMA where the TMA attached(FIG. 2C). The processes may be repeated a number of cycles to increasethe amount of infiltrated alumina. For lithographic applications, the PScomponent, which is inert to the ALD precursors, the sublayer materialbeneath the PS, and the PMMA material is then removed by oxygen plasmato leave a pattern that mimics the original pattern of PS and PMMA butthat is now made of the alumina synthesized by the ALD precursors (FIG.2D). This pattern of alumina can then be used as an etch mask toreactively ion etch (RIE) the template 50 (FIG. 2E), after which thealumina and any remaining sublayer material is removed, leaving theetched template (FIG. 2F) with protrusions 51 of parallel bars having apitch L₀.

As is apparent from FIGS. 2A-2F, the prior art process results in anetched substrate with features or lines (protrusions 51) that have thesame pitch as the natural pitch (L₀) of the repeating structural unitsof one of the BCPs. In embodiments of this invention BCPs and SIS areused to halve the pitch and thus double the line density. The BCP usedin embodiments of this invention comprises first and secondinterconnected BCP components with a functional group at the junction orinterface of the components. After deposition of the BCP on thesubstrate and annealing, a pattern of parallel stripes of first andsecond BCP components is formed with a pattern of interfaces between thecomponents that contains the functional groups. Each of the BCPcomponents is non-reactive with the ALD precursor, while the functionalgroup is reactive with the ALD precursor. The ALD results in theinfiltration of inorganic material, e.g., alumina, into the interfaceswhere the reactive functional groups are located but without affectingthe BCP components. The organic material of the BCP components andfunctional groups is removed, leaving a pattern of parallel lines ofinorganic material with a pitch half that of the stripes of BCPcomponents. The inorganic lines can then be used as an etch mask to etchthe underlying substrate.

FIGS. 3A-3F illustrate an embodiment of the method of the invention.FIG. 3A is a cross-sectional view of a substrate 150 with a patternedsublayer 155 and a layer 160 of the BCP that has been deposited on thepatterned sublayer 155, but not yet annealed. The BCP material in layer160 comprises two polymer components A and B, each of which isnon-reactive with the precursors used for the inorganic material thatwill be deposited by ALD, and a functional group at the junction of theA and B components. The BCP molecule may have the form A-b-B, where “b”includes the functional group that reacts with the ALD precursors.Suitable polymers for the A and B components include, but are notlimited to linear or branched chain polymers like polyisoprene (PI),polyethylene, polypropylene, polybutadiene and other derivatives;aromatics like polystyrene (PS), poly-methylstyrene; acrylonitrilebutadiene styrene; polydimethylsiloxane (PDMS) and olyhedral oligomericsilsesquioxane (POSS). The functional groups at the junction of the Aand B components include, but are not limited to, a carbonyl group, acarboxyl group, a thiol group and an amine group. In one example of aBCP molecule, the BCP copolymers may be PI and PS and the functionalgroup a carbonyl group, as depicted below:

The functional groups are reactive with the precursors used for theinorganic material that will be deposited by ALD, which include, but arenot limited to, oxides of aluminum, titanium, silicon (e.g., SiO₂), zinc(e.g., ZnO); and tungsten (W). The BCP material is dissolved in asuitable solvent and spin-coated on the sublayer 155 to form the layer160. The thickness of BCP layer 160 is preferably between 0.8-1.5 L₀.

The substrate 150 may be formed of any suitable material, such as, butnot limited to, single-crystal Si, amorphous Si, silica, fused quartz,silicon nitride, carbon, tantalum, molybdenum, chromium, alumina andsapphire. The sublayer 155 may be a nearly neutral layer of a materialthat does not show a strong wetting affinity by one of the polymerblocks over the other. The neutral layer can be, but is not restrictedto, a functionalized polymer brush like carboxyl-terminated orhydroxyl-terminated brush, a cross-linkable polymer, a functionalizedpolymer “A” or “B” or a functionalized random copolymer “A-r-B”. Thefunctional group may be, for example, a hydroxyl (OH) group. Thesubstrate has a silicon oxide surface film and the neutral layer couldcontain but is not limited to a hydroxyl-terminatedpoly(styrene-r-isoprene) brush containing ˜67% styrene. Alternatively,the sublayer may be a material known as a polymer “mat” layer that showsstrong wetting affinity by one of the polymer blocks over the other. Thematerial of mat layer can be, but is not limited to, a cross-linkablepolymer “A” or “B” like a crosslinkable polystyrene (XPS mat). Thesublayer material may be spin-coated on the substrate to a thickness ofabout 1-10 nm. The sublayer is annealed for the end-groups to graft tothe oxidized substrate surface in the case of an end-functionalizedmaterial or for the cross linking units to carry the cross-linking inthe case of polymer “mats”. After annealing, any ungrafted sublayermaterial is rinsed away in a suitable solvent (toluene, PGMA, NMP, etc).The purpose of the sublayer is to tune the surface energy adequately topromote the desired domain orientation (for example, perpendicularlamellae of the BCP components).

For DSA, additional steps are required to create a chemical pattern inthe sublayer. These steps may include e-beam lithography,photolithography or nanoimprint lithography and potentially acombination of polymer mats and brushes. For example, a resist layer canbe patterned by e-beam, followed by deposition of the sublayer materialand removal of the resist. Alternatively, the chemical structure ofexposed portions of a neutral sublayer can be chemically damaged oraltered (by oxygen plasma etching or other process such as RIE, neutralatom (such as Ar) or molecule milling, ion bombardment andphotodegradation) so that the exposed portions of the neutral sublayerhave a preferred affinity (or repulsion) for one of the BCP components.

FIG. 3B shows the structure after annealing. The pattern of the sublayer155 directs the A and B BCP components to self-assemble according to thepattern, with the functional groups at the interfaces 180 being formedbetween the A and B components. The BCP components may be chosen to formlamellae, cylinders or spheres with a characteristic center-to-centerdistance or “natural pitch” L_(o0) in the range of 5-50 nm. In thepreferred embodiment, as shown in FIG. 3B, the A and B components arelamellae with perpendicular orientation of the lamellar domains relativeto the substrate 150. The widths of the A and B components may bebetween about 5 and 50 nm. The width of the interfaces 180 depends onthe choice of the interface functional group (i.e., its size andchemistry) and the choice of the block copolymer components, but wouldtypically be in the range of about 0.5-3 nm. The resulting pattern inFIG. 3B thus includes interfaces 180 that are chemically prone to reactwith the ALD precursors and stripes of A and B components that arechemically inert to the ALD precursors.

In FIGS. 3C and 3D the structure of FIG. 3B is placed in an ALD chamberand exposed to chemical precursors that react only with the material inthe interfaces 180. For this example, it will be assumed that the A-b-BBCP material is PI-b-PS, where “b” includes a carbonyl group, and thatthe inorganic material to be formed is an aluminum oxide (AlOx), e.g.,alumina (Al₂O₃). If the chemical precursors are a sequence of trimethylaluminum (TMA) and water, the TMA will react with the carbonyl groupsand become infused into the material in the interfaces, but will notreact with the PI and PS (FIG. 3C). The second precursor, water, reactswith the TMA to form an aluminum oxide (AlO_(x)), which is predominatelyalumina, in the interfaces 180 (FIG. 3D). The ALD process can berepeated a number of cycles, typically more than 3, to form the desiredamount of alumina in the interfaces 180. It is possible to first run theALD tool in “static mode”, also called “sequential infiltrationsynthesis” (SIS), to infuse the TMA inside the material in theinterfaces 180, and then switch to conventional thermal ALD, wherein thesubstrate is heated, to increase the growth rate of the alumina in theinterfaces. During the first SIS cycle a monolayer of alumina binds tothe functional sites in the interfaces 180. Additional alumina is thendeposited on top of the bound alumina during subsequent SIS cycles. Thiswill allow “seeding” of growth at the interfaces 180 andcontrolling/growing the width of the alumina interfaces with subsequentSIS cycles. Growth of the alumina in the interfaces is accommodated bygrowth of the alumina in interstitial spaces around the A (PI) and B(PS) block copolymer chains as well as by swelling of the blockcopolymers. The number of cycles can be selected to assure the aluminainterfaces have the desired thickness, typically at least 5 nm.Following the ALD, the structure is a pattern of alumina lines 190 atthe interfaces between the PI and PS, with the alumina lines 190 havinga pitch approximately half the pitch L₀ of the periodic pattern of PIand PS stripes, as depicted in FIG. 3D.

In FIG. 3E, reactive ion etching (RIE) is used to remove all the organicmaterial (the PI, PS and any material in the interfaces) and etch intothe substrate 150, using the alumina lines 190 as an etch mask. Thesubstrate 150 then has a pattern of periodic protrusions 151. The RIEcan be done in a plasma of O₂, CO₂ or H₂—Ar. The RIE also removes thesublayer 155 below the PI and PS. If the substrate 150 is a Sisubstrate, a fluorine etch can be used to etch features into the Sisubstrate. In FIG. 3F, the remaining alumina and underlying sublayermaterial is removed by RIE or a wet etch. Alternatively, the substrate150 could have suitable transfer layers, like a hard mask, between thesubstrate and the alumina lines 190, to aid in transferring the patterninto the substrate. The resulting substrate with the etched patternshown in FIG. 3F can be used as an imprint template, with the periodicpattern of protrusions 151 being a pattern of generally radial lines orgenerally concentric rings. Such imprint templates can be used to make amaster imprint template, which is then used to imprint patterned-mediamagnetic recording disks. Imprint templates with the pattern ofprotrusions 151 being parallel generally straight lines can be used inmaking MPU, DRAM and NAND flash devices.

The ALD precursors are selected to infiltrate the inorganic materialinto the interfaces and to be non-reactive with the BCP components. Inthe examples above, the inorganic material is alumina and the precursorsare TMA (which is reactive with carbonyl groups, carboxyl groups andamine groups) and water vapor. Other inorganic materials with suitableprecursors may be formed by ALD. For example, if the inorganic materialis to be a titanium oxide (TiOx), the precursors may betetrakis(dimethylamido)titanium (TDMAT) and water vapor. Alternatively,other titanium containing precursors could be used in conjunction withwater, such as titanium tetrachloride (TiCl₄) and titanium butoxide(Ti(OBu)₄). If the inorganic material is to be ZnO then the precursorsmay be diethyl zinc and water. If the inorganic material is to be SiO₂then the precursors may be tris(tert-pentoxy)silanol and water. If theinorganic material is to be tungsten (W), then the precursors may betungsten hexafluoride and disilane.

While the present invention has been particularly shown and describedwith reference to the preferred embodiments, it will be understood bythose skilled in the art that various changes in form and detail may bemade without departing from the spirit and scope of the invention.Accordingly, the disclosed invention is to be considered merely asillustrative and limited in scope only as specified in the appendedclaims.

What is claimed is:
 1. A method using a block copolymer (BCP) for linedensity multiplication on a substrate comprising: providing a substrate;depositing on the substrate a sublayer for the BCP; patterning thesublayer; forming on the patterned sublayer a BCP, the BCP comprisingfirst and second BCP components and a functional group at the interfacesof the first and second components, the BCP being directed by thepatterned sublayer to self-assemble into said first and secondcomponents and interfaces of said functional group between said firstand second components; placing the substrate with said self-assembledfirst and second components and said functional group interfaces in anatomic layer deposition (ALD) chamber; introducing into the ALD chambera first precursor for an inorganic material, said first precursor beingnon-reactive with said first and second components and reactive withsaid functional group; and introducing into the ALD chamber a secondprecursor for said inorganic material, said second precursor beingnon-reactive with said first and second components and reactive withsaid first precursor to form said inorganic material in the interfacesbetween said first and second components.
 2. The method of claim 1wherein said inorganic material is selected from an aluminum oxide, atitanium oxide, SiO₂, ZnO, and W.
 3. The method of claim 1 wherein saidfirst precursor is trimethylaluminum (TMA), said second precursor iswater vapor, and said inorganic material is an aluminum oxide.
 4. Themethod of claim 1 wherein the functional group is selected from acarboxyl group, a carbonyl group and an amine group.
 5. The method ofclaim 1 wherein the first component is different from the secondcomponent and each of the first and second components is selected frompolyisoprene (PI), polyethylene, polypropylene, polybutadiene,polystyrene (PS), poly-methylstyrene; acrylonitrile butadiene styrene,polydimethylsiloxane (PDMS) and olyhedral oligomeric silsesquioxane(POSS).
 6. The method of claim 1 wherein the BCP comprises a copolymerof polystyrene (PS) and polyisoprene (PI) and a functional groupselected from a carboxyl group, a carbonyl group, a thiol group and anamine group.
 7. The method of claim 1 wherein the first and secondcomponents self-assemble as lamellae perpendicular to the substrate. 8.The method of claim 1 wherein the first and second componentsself-assemble into a pattern of alternating first and second stripeswith a natural pitch L₀, and wherein the inorganic material in theinterfaces forms a pattern of lines having a pitch of approximately 0.5L₀.
 9. The method of claim 1 wherein introducing a first precursor andintroducing a second precursor comprises at least three cycles of firstand second precursor introduction.
 10. The method of claim 1 wherein thefirst and second components are patterned into periodic alternatingstripes, the stripe pattern being selected from generally radial lines,generally concentric rings, and parallel generally straight lines. 11.The method of claim 1 further comprising: after said inorganic materialis formed in the interface, removing the first and second components andthe functional group; etching the substrate, using said inorganicmaterial as an etch mask; and thereafter removing said inorganicmaterial and first component, leaving the etched substrate.
 12. Themethod of claim 11 wherein removing the first and second components andthe functional group comprises reactive ion etching (RIE).
 13. Apatterned block copolymer (BCP) structure comprising: a substrate; apattern of alternating stripes of a first BCP component and a second BCPcomponent on the substrate having a pitch parallel to the substrate anda pattern of lines of an oxide on the substrate between the stripes offirst and second BCP components, the oxide lines having a pitch parallelto the substrate of approximately one-half the pitch of the stripes ofthe first or second BCP components.
 14. The structure of claim 13wherein the oxide is selected from an aluminum oxide, a titanium oxide,SiO₂ and ZnO.
 15. The structure of claim 13 wherein the first componentis different from the second component and each of the first and secondcomponents is selected from polyisoprene (PI), polyethylene,polypropylene, polybutadiene, polystyrene (PS), poly-methylstyrene;acrylonitrile butadiene styrene, polydimethylsiloxane (PDMS) andolyhedral oligomeric silsesquioxane (POSS).
 16. The structure of claim13 wherein the pattern of oxide lines is a periodic pattern selectedfrom generally radial lines, generally concentric rings, and parallelgenerally straight lines.